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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD959 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SB867 Excellent linearity of hFE APPLICATIONS For power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 130 80 7 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae 3 6 30 150 -55~150 UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA ;IE=0 IC=2A; IB=0.1A IC=2A; IB=0.1A VCB=100V;IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=2V IC=0.5A ; VCE=2V IC=0.5A ; VCE=10V 45 60 30 MIN 80 2SD959 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V 0.5 1.5 10 50 |I |I V V A A 260 MHz Switching times ton ts tf hFE-2 classifications R 60-120 Q 90-180 TOR NDU ICO E SEM ANG INCH Turn-on time Storage time 0.5 |I IC=0.5A IB1=-IB2=50mA 2.5 Fall time 0.15 s |I |I s s P 130-260 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD959 TOR NDU ICO E SEM ANG INCH Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD959 TOR NDU ICO E SEM ANG INCH 4 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD959 TOR NDU ICO E SEM ANG INCH 5 |
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